Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 56

r
seed
seed
seed
CrC
. . . . . . . . . . .- + e e l- - - - : - . . . . . . . .-
....
t- - - - - - - - - - - -
seed;

" ;' ,
. ..:, . . ., - . . ..,, .
_' .J "-, r +. ,

. i" r Sr " i, r ' %
T . .. ,
4 " .L ., .L
.E~ '3
, . _ " . " " " ,,
- ..., , , , "% .. -. -
-Of
ti .e . * -
: ., " . . ,"., ,.c ..!., "" -

Figure 4.7 a, Near-field topology of the sample showing the 'wing' and
'seed' regions. Dashed lines have been placed to highlight the region
boundaries. b, Near-field integrated photoluminescence intensity. Note
that in this sample the emission intensity is highest in the seed regions. c,
The empirically derived Huang-Rhys parameter. d, The strain as derived
using the inverse of the function S(Exx) presented in Fig. 4.5. Brighter
regions represent areas with lower strain values.

56

L) ~
I'FC
" _ - fi .