Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: 46
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(cl +i)(
j+1j
j = 0..9
1
2
1
M9 -
2
(1 -a+ fj+ -z,j+1dj+1
( j+1) j j+1 j
(1 - j,j+) flj,j+ (1 + j,j
(1- j,j+l)j,j+le-1zj+ldj+1
(1 + +j,j+l)fj,j+lezj+ldj+1 )
(4.3.14)
+ 1)flj,j+i
+7) ljj4
qz, jEz, j (W) X L, j+1( )
j,j+l = +l+l(j+ =
The dispersion relation can then be found by relating the j=O coefficients to the j=10O
coefficients. Doing so yields:
C
C)
O
O
0-
91.0-
90.8-
90.6
90.4-
90.2
10 15
0 5 10 15
q1d
20
20
Figure 4.3 Plots of the dispersion relations for the upper and lower branches of
the I-LO phonon modes for the heterostructure pictured in Fig 4.2. The 10
modes arise from zone-folding of the phonons at the super-lattice interfaces.
Black (red) lines represent the (anti-)symmetric phonon modes.
46
. z
1 --
1 -
x-
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc115113/m1/56/ocr/: accessed April 24, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .