Development of Silicon Nanowire Field Effect Transistors

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Description:

An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.

Creator(s): Nukala, Prathyusha
Creation Date: December 2011
Partner(s):
UNT Libraries
Collection(s):
UNT Theses and Dissertations
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Publisher Info:
Publisher Name: University of North Texas
Publisher Info: www.unt.edu
Place of Publication: Denton, Texas
Date(s):
  • Creation: December 2011
Description:

An economically reliable technique for the synthesis of silicon nanowire was developed using silicon chloride as source material. The 30-40 micron long nanowires were found to have diameters ranging from 40 – 100 nm. An amorphous oxide shell covered the nanowires, post-growth. Raman spectroscopy confirmed the composition of the shell to be silicon-dioxide. Photoluminescence measurements of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell. Etching of the oxide shell was found to decrease the intensity of green emission. n-type doping of the silicon nanowires was achieved using antimony as the dopant. The maximum dopant concentration was achieved by post-growth diffusion. Intrinsic nanowire parameters were determined by implementation of the as-grown and antimony doped silicon nanowires in field effect transistor configuration.

Degree:
Level: Master's
PublicationType: Master's Thesis
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Subject(s):
Keyword(s): Silicon | doping | nanowires
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Partner:
UNT Libraries
Collection:
UNT Theses and Dissertations
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  • ARK: ark:/67531/metadc103364
Resource Type: Thesis or Dissertation
Format: Text
Rights:
Access: Use restricted to UNT Community
Holder: Nukala, Prathyusha
License: Copyright
Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.